主持或参与科研项目 [1] 西电研究生创新基金项目，阻变存储器不稳定初始化过程研究，2021.01.01-2022.12.31，1.0万，主持。 发表论文 [1] Yiwei Duan, Haixia Gao, Jingshu Guo, Mei Yang, Zhenxi Yu, Xuping Shen, Shuliang Wu, Yuxin Sun, Xiaohua Ma, and Yintang Yang, "Effect of nitrogen capture ability of quantum dots on resistive switching characteristics of AlN-based RRAM," Applied Physics Letters, vol. 118, no. 1, 013501, 2021. [2] Yiwei Duan, Haixia Gao, Mengyi Qian, Yuxin Sun, Shuliang Wu, Jingshu Guo, Mei Yang, Xiaohua Ma, and Yintang Yang, "Dynamic evolution process from bipolar to complementary resistive switching in non-inert electrode RRAM," Applied Physics Letters, vol. 120, no. 20, 203506, 2022. [3] Yiwei Duan, Haixia Gao, Mengyi Qian, Yuxin Sun, Shuliang Wu, Jingshu Guo, Mei Yang, Xiaohua Ma, and Yintang Yang, "In-depth understanding of physical mechanism of the gradual switching in AlOxNy-based RRAM as memory and synapse device," Applied Physics Letters, vol. 120, no. 26, 263504, 2022. [4] Yiwei Duan, Haixia Gao, Mengyi Qian, Yuxin Sun, Shuliang Wu, Jingshu Guo, Mei Yang, Xiaohua Ma, and Yintang Yang, "Influence of non-inert electrode thickness on the performance of complementary resistive switching in AlOxNy-based RRAM," Applied Physics Letters, vol. 121, no. 7, 073502, 2022. [5] Yiwei Duan, Haixia Gao, Xuping Shen, Yuxin Sun, Jingshu Guo, Zhenxi Yu, Shuliang Wu, Mei Yang, Xiaohua Ma, and Yintang Yang, "High-Resistance State Reduction During Initial Cycles of AlOₓNy-Based RRAM," IEEE Transactions on Electron Devices, vol. 68, no. 11, 5606-5611, 2021.
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